PART |
Description |
Maker |
CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts 240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
CM150DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM100TJ-24F |
128 x 64 pixel format, LED or EL Backlight available Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM150TJ-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD 150 Amperes/600 Volts 128 x 64 pixel format, LED or EL Backlight available
|
POWEREX[Powerex Power Semiconductors]
|
CM150TU-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts 240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
CM75TJ-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
CM600HU-12F |
Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
HA14G HA12G HA18G HA11G HA13G HA15G HA16G HA17G |
2000000 SYSTEM GATE 1.5 VOLT FPGA 100000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN 1.0 AMP. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS
|
济南固锝电子器件有限公司 JGD[Jinan Gude Electronic Device] Jinan Gude Electronic Device Co., Ltd.
|